Low field electron transport in α − G a 2 O 3: An <i>ab initio</i> approach

نویسندگان

چکیده

Trigonal α − G a 2 O 3 is an ultrawideband semiconductor with potential applications in power electronics and ultraviolet opto-electronic devices. In this Letter, we calculate the low field electron mobility from first principles calculations. The effect of all 30 phonon modes taken into account for transport calculation. dispersion Raman Infrared spectra are calculated under density functional perturbation theory formalism compared experiments. electron–phonon interaction (EPI) elements on dense reciprocal space grid obtained using Wannier function interpolation. full energy phonons included both polar nonpolar EPI then evaluated incorporating effects polar, nonpolar, ionized impurity scattering Rode's iterative method. At room temperature, isotropic average estimated to be ∼220 c m / V s predominantly limited by optical at doping 1.0 × 1 0 15 3. anisotropy arising also evaluated. Temperature dopant concentration variation studied, which can help optimization growth measurements.

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ژورنال

عنوان ژورنال: Applied Physics Letters

سال: 2021

ISSN: ['1520-8842', '0003-6951', '1077-3118']

DOI: https://doi.org/10.1063/5.0027787